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  Datasheet File OCR Text:
 SMD Type
Silicon PNP Epitaxial Planar Type 2SA1035
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
1
2
+0.1 0.95-0.1 +0.1 1.9-0.1
Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.55
High forward current transfer ratio hFE.
+0.1 1.3-0.1
Low noise voltage NV.
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -55 -55 -5 -50 -100 200 150 -55 to +150 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Base-emitter voltage * Collector-base cutoff current Collector-emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage * Transition frequency Noise voltage * Pulse measurement. Symbol VCBO VCEO VEBO VBE ICBO ICEO hFE Testconditons IC = -10 iA, IE = 0 IC = -2 mA, IB = 0 IE = -10 iA, IC = 0 VCE = -1 V, IC = -100 mA VCB = -10 V, IE = 0 VCE = -10 V, IB = 0 VCE = -5 V, IC = -2 mA 180 Min -55 -55 -5 -0.7 -1.0 -0.1 -1 700 -0.6 200 150 V MHz mV Typ Max Unit V V V V iA iA
VCE(sat) IC = -100 mA, IB = -10 mA fT NV VCB = -5 V, IE = 2 mA, f = 200 MHz VCE = -10 V, IC = -1 mA, GV = 80 dB Rg = 100 kU, Function = FLAT
hFE Classification
Marking hFE HR 180 360 HS 260 520 HT 360 700
+0.1 0.38-0.1
0-0.1
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